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Author

Mallikarjun C. Sarsamba

3 papers indexed here

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Open access Nov 2026

Comparative Analysis and Genetic Algorithm Optimization of Multi-Transistor FinFET SRAM Topologies for SNM, Leakage, and Delay Improvement at 18nm

With continuous technology scaling, Static Random Access Memory (SRAM) faces significant challenges including increased leakage power, reduced stability, and higher delay. FinFET technology has emerged as a promising alternative to conventional CMOS technology due to its superior electrostatic control and reduced short...

M. Govinda, Mallikarjun C. Sarsamba, M. C. Parameshwara · 0 citations

Volume 5 Issue

Within these limits, the proposed cell is a suitable candidate for last-level cache and embedded memory in area- and power-constrained mobile system-on-chip applications.

M. Govinda, Mallikarjun C. Sarsamba, S. Mathad · 165 citations · ⚡3
Open access Oct 2026

Single-Ended 7T SRAM Cell Design Using 18 nm FinFET Technology for Low-Power and High-Stability Nanoscale VLSI Applications

This study presents the design and performance evaluation of a single-ended seven-transistor (7T) static random-access memory (SRAM) cell in 18 nm fin field-effect transistor (FinFET) technology for low-power, high-stability nanoscale very-large-scale integration (VLSI) applications. The cell combines separate read and...

Govinda M. R., Mallikarjun C. Sarsamba, S. Mathad · 0 citations

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