With continuous technology scaling, Static Random Access Memory (SRAM) faces significant challenges including increased leakage power, reduced stability, and higher delay. FinFET technology has emerged as a promising alternative to conventional CMOS technology due to its superior electrostatic control and reduced short...
M. Govinda, Mallikarjun C. Sarsamba, M. C. Parameshwara· Indian Journal of Technical...· 0 citations
Within these limits, the proposed cell is a suitable candidate for last-level cache and embedded memory in area- and power-constrained mobile system-on-chip applications.
M. Govinda, Mallikarjun C. Sarsamba, S. Mathad· 165 citations· ⚡3
This study presents the design and performance evaluation of a single-ended seven-transistor (7T) static random-access memory (SRAM) cell in 18 nm fin field-effect transistor (FinFET) technology for low-power, high-stability nanoscale very-large-scale integration (VLSI) applications. The cell combines separate read and...
Govinda M. R., Mallikarjun C. Sarsamba, S. Mathad· Journal of Computers, Mechan...· 0 citations
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