A VCMA-MTJ-Based Architecture for In-Memory Unified High-Reliability CAM and PUF Operations
This paper proposes a Content-Addressable Memory (CAM) architecture relying on a twelve-transistor (12T) cell integrating two Voltage-Controlled Magnetic Anisotropy Magnetic Tunnel Junctions (VCMA-MTJs) targeting high-reliability Ternary CAM (TCAM) and Physically Unclonable Function (PUF) operations. The proposed 12T-2...