The emergence of ferroelectricity in doped aluminum nitride has positioned wurtzite nitrides as promising candidates for next-generation memory and logic devices. However, the structural modifications required to induce and stabilize ferroelectricity, including changes in bond strength, harmonicity, and crystal order,...
Sarah Makarem, Ian Mercer, Saman Zare et al.· Nature Communications· 0 citations
The roles of dislocation motion and interdiffusion on the interfacial morphology and thermal properties of the Ge–Si interface were elucidated using transmission electron microscopy, energy dispersive x-ray spectroscopy, and thermoreflectance measurements. Epitaxial Ge thin films deposited on Si (001) substrates by mol...
B. Carson, K. Huynh, T. Pfeifer et al.· Journal of Applied Physics· 0 citations
A versatile digital twin for simulating the electron beam trajectory throughout an electron microscope, and the calibration procedures required for accurate prediction of microscope states are developed.
T. Pfeifer, Andrew R. Lupini, Eric R. Hoglund· 0 citations
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