Author

Yu-Che Huang

h-index 9 View on Semantic Scholar

We have 3 of 40 papers

We haven’t gathered this author’s papers yet. Follow them and we’ll fetch their work.

Not the right person? Other researchers publish under this name.

Open access Oct 2026

Dielectric Engineering for Sub-Nanometer Equivalent Oxide Thickness in Double-Gate WS2-FETs Using All-ALD-HfO2/ h -AlN Gate Stacks

This study reports a gate stack composed of an ultrathin epitaxial hexagonal aluminum nitride (h-AlN) interfacial layer (IL) deposited by plasma-enhanced atomic layer deposition (PEALD) between hafnium oxide (HfO2) and a monolayer tungsten disulfide (WS2) channel. The inherently inert surfaces of two-dimensional (2D)...

Shin-Yuan Wang, Shu-Jui Chang, Yu-Che Huang et al. · ACS Applied Electronic Mater... · 0 citations

Open access Aug 2026

Guiding Orthorhombic Phase Evolution in Ultrathin (<4 nm) Hf0.5Zr0.5O2 on Germanium.

The integration of scalable, high-performance Hf0.5Zr0.5O2 (HZO) ferroelectric materials with high-mobility channels such as germanium is critical for next-generation logic and memory devices. However, maintaining robust ferroelectricity in films thinner than 5 nm remains a major challenge. In this study, we systematic...

Jer-Fu Wang, Shu-Jui Chang, Yu-Tsung Liao et al. · ACS Applied Materials and In... · 0 citations

Open access Sep 2026

Functionalization-Free Atomic Layer Deposition of Sub-1 nm EOT HfO2 Directly on MoS2 for Gate-All-Around Field-Effect Transistors

Layered semiconductors offer a promising route beyond conventional silicon technology but face challenges in integrating high-k dielectrics due to their dangling-bond-free surfaces. Here, we report a direct atomic layer deposition approach, termed HALO (High-dose precursor immersion, Adsorption enhancement, and Low-t...

Po-Heng Pao, Yi-Hsien Lin, Jia-Hao Chih et al. · ACS Applied Electronic Mater... · 0 citations