Haitong Li

Device–Circuit–System Co-Design of Reconfigurable Oxide–Semiconductor 2T Nonvolatile Gain-Cell Memory and Sandwich-3-D LLM Accelerator

In this work, we present an oxide–semiconductor (OS)-based 2T nonvolatile gain-cell (NVGC) memory and a “sandwich 3-D” stacking scheme, co-designed using atomic layer deposition (ALD) InOx oxide–semiconductor FETs (OSFETs) and OS-ferroelectric FETs (FeFETs), for efficient large language model (LLM) acceleration. The ne...

Monolithic 3D integration of atomic-layer-deposited oxide semiconductors on 200-mm silicon wafers.

200 mm Wafer-Scale Monolithic 3D Integration of Atomic Layer-Deposited Oxide Semiconductors

Monolithic 3D (M3D) integration offers a pathway to overcome the scaling limits of conventional silicon complementary metal-oxide-semiconductor (CMOS) technology by extending dense vertical stacking of multifunctional logic and memory devices. Here, we demonstrate wafer-scale M3D integration of three tiers of atomic-la...

PROTEUS: A 40 nm Programmable General-Purpose Digital Compute-In-Memory Accelerator With eNVM and Hierarchical ISA for Versatile Edge AI

We present PROTEUS, an 18 mm2 programmable general-purpose digital compute-in-memory (GP-DCIM) accelerator integrating 4 Mb resistive random access memory (RRAM) and 2.6 Mb tensor static random access memory (SRAM) with a 32-bit hierarchical DCIM instruction set architecture (ISA). PROTEUS features fine-grained 1-D mat...